Commercialization of Ultra Micro Fabrication Using Electroplating
نویسندگان
چکیده
منابع مشابه
Fabrication of InGaN-Based Vertical Light Emitting Diodes Using Electroplating
Group III–nitride semiconductors and their ternary solid solutions are very promising as the candidates for both short wavelength optoelectronics and power electronic devices (Nakamura et al. 1997; Nakamura et al. 1995; Lee, et al. 2010; Youn, et al. 2004). The AlGaN/GaN heterostructure field effect transistors (HFETs) have a great potential for future high-frequency and high-power applications...
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ژورنال
عنوان ژورنال: Journal of the Japan Society for Precision Engineering
سال: 2012
ISSN: 0912-0289,1882-675X
DOI: 10.2493/jjspe.78.1025